The global power MOSFET market size was US$ 8.6 billion in 2021. The global power MOSFET market size is forecast to reach US$ 13.8 billion by 2030, growing at a compound annual growth rate (CAGR) of 6 ...

An SCR topology transmogrifies into BJT two-wire precision current source with a self-resetting fault-current limiter.

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...

Scientists from a Lisbon, Portugal, research group at the Center of Materials Research made the first FET with a common sheet of paper for an interstrate layer. The research team, led by Associate ...

Advanced Micro Devices has created new high-performance transistors in its labs based on the simple concept that sometimes two are better than one. The chipmaker said Tuesday it has manufactured in ...

Here, we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device.

A transistor is a tiny but powerful electronic component that acts like a switch or an amplifier. It is made from a semiconductor material, usually silicon, and has three legs for connection to ...

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...