This article explains the switching behavior of power MOSFETs in practical application circuits and shows the reader/designer how to choose the right device for the application using the ...
SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
In a critical advance that will help designers meet the stringent power-density and packaging requirements of new sub-brick power architectures, Siliconix Inc. announced the industry's first 200-V ...
Self protected against excessive temperature, current, and voltage, as well as ESD, the BSP75G 60V, 550-m? n-channel MOSFET will also protect the load via internal current limiting. The device ...
A new 200-V power MOSFET with ultra-low resistance and advanced topside-cooled packaging enables designers to cut losses, shrink layouts, and reduce the need for parallel devices in high-current ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits (ICs) for energy-efficient power conversion, today announced the addition of two ...
Infineon Technologies AG launches new packages for the CoolSiC MOSFET 750 V G2 technology, engineered to deliver the highest system efficiency and power density in automotive and industrial power ...
Cree, one of the market leaders in silicon carbide (SiC) power electronics, introduced new Wolfspeed 650V SiC MOSFETs, which are envisioned for applications where efficiency is a key priority, ...
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