In a new article by Business Korea and their industry sources, on June 23, SK hynix presented a research paper on the new 3D DRAM, aka "dream memory" at the semiconductor conference VLSI 2024, held in ...
SK hynix has just announced it's planning to develop a 4F2 (square) DRAM, joining South Korean rival Samsung and its journey into the world of 3D DRAM. The cost of EUV (extreme lithography) processes ...
SK hynix officially announced its next-generation DRAM technology roadmap, including the '4F² (4F Square) VG (Vertical Gate) platform' and 3D DRAM, at the prestigious conference in semiconductor ...
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SK hynix reveals DRAM development roadmap through 2031 — DDR6, GDDR8, LPDDR6, and 3D DRAM incoming
SK hynix has published its DRAM roadmap at its SK AI Summit 2025. While the plans are displayed in a very general way and do not reveal important specifics, they still show the direction of DRAM ...
SK Hynix has successfully developed a 72-layer 256 Gigabit TLC 3D NAND flash chip, the company announced. It will allow one chip to hold 32 Gigabytes of memory. It makes it the most advanced, ahead of ...
Although Samsung stole the thunder last month when they launched the world’s first commercial 3D NAND product, memory giant SK Hynix definitely wasn’t sitting idly by as they’ve decided to also show ...
Samsung and Toshiba/SanDisk weren’t the only ones at FMS announcing their latest and greatest 256Gb 3-bit MLC 3D NAND. South Korean memory maker SK Hynix seems to have also figured it out by ...
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